(China (Mainland))
Product Summary
The BUT12AF is a High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. It is suitable for Converters, Inverters, Switching regulators and Motor control systems.
Parametrics
BUT12AF absolute maximum ratings: (1)VCESM collector-emitter peak voltage: 1000 V; (2)VCEO collector-emitter voltage open base: 450 V; (3)ICsat collector saturation current: 5A; (4)IC collector current (DC): 8A; (5)ICM collector current (peak value):20 A; (6)IB base current (DC): 4A; (7)IBM base current (peak value): 6A; (8)Ptot total power dissipation: 23 W; (9)Tstg storage temperature: -65 to +150℃; (10)Tj junction temperature: 150℃.
Diagrams
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 BUT12AF |
Other |
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Data Sheet |
Negotiable |
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BUT100 |
Other |
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Data Sheet |
Negotiable |
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BUT11 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Sil Transistor |
Data Sheet |
Negotiable |
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BUT11A |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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BUT11A,127 |
NXP Semiconductors |
Transistors Bipolar (BJT) BUT11A/SOT78/RAILH// |
Data Sheet |
Negotiable |
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BUT11AF |
Other |
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Data Sheet |
Negotiable |
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BUT11AFTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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