(China (Mainland))
Product Summary
The STP6NK60Z is a Zener-Protected SuperMESH Power MOSFET. The STP6NK60Z is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the STP6NK60Z are (1)high current, high speed switching; (2)ideal for off-line power supplies, adaptors and pfc; (3)lighting.
Parametrics
STP6NK60Z absolute maximum ratings: (1)VDS Drain-source Voltage (VGS =0): 600 V; (2)VDGR Drain-gate Voltage: 600 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current (continuous): 66A; (5)IDM () Drain Current (pulsed): 24 A; (6)PTOT Total Dissipation: 32 W; (7)VISO Insulation Withstand Voltage (DC): 2500 V; (8)Tj Operating Junction Temperature: -55 to 150℃; (9)Tstg, Storage Temperature: -55 to 150℃.
Features
STP6NK60Z features: (1)typical RDS(on) = 1Ω; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
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 STP6NK60Z |
STMicroelectronics |
MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH |
Data Sheet |
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STP6NK60ZFP |
STMicroelectronics |
MOSFET N-Channel 600V Zener SuperMESH |
Data Sheet |
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