Product Summary

The 2SB1132 is a Medium Power Transistor.

Parametrics

2SB1132 absolute maximum ratings: (1)Peak reverse voltage, VRM: 90V; (2)DC reverse voltage, VR: 80V; (3)Peak forward current, IFM: 225mA; (4)Mean rectifying current, IO: 100mA; (5)Surge current (1s), Isurge: 500mA; (6)Junction temperature, Tj: 125℃; (7)Storage temperature, Tstg: -55 to +125℃.

Features

2SB1132 features: (1)Low VCE(sat) = -0.2V (Typ.) (IC/IB = -500mA/-50mA); (2)Compliments 2SD1664/2SD1858.

Diagrams

2SB1132 External dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SB1132
2SB1132
Other

Data Sheet
Negotiable 
2SB1132 FD5T100R
2SB1132 FD5T100R
Other

Data Sheet
Negotiable 
2SB1132T100P
2SB1132T100P
ROHM Semiconductor
Transistors Bipolar (BJT) DVR PNP 32V 1A
Data Sheet
0-1: $0.30
1-25: $0.23
25-100: $0.16
100-500: $0.11
500-1000: $0.08
2SB1132T100R
2SB1132T100R
ROHM Semiconductor
Transistors Bipolar (BJT) PNP 32V 1A
Data Sheet
0-1: $0.30
1-25: $0.23
25-100: $0.17
100-500: $0.09
500-1000: $0.08
2SB1132-x-AB3-R
2SB1132-x-AB3-R
Other

Data Sheet
Negotiable 
2SB1132 T100 R
2SB1132 T100 R
Other

Data Sheet
Negotiable 
2SB1132 T100 Q
2SB1132 T100 Q
Other

Data Sheet
Negotiable 
2SB1132 R
2SB1132 R
Other

Data Sheet
Negotiable