Product Summary

The IRFP32N50 is a HEXFET Power MOSFET. The applications of the device include: (1)Switch Mode Power Supply (SMPS); (2)Uninterruptible Power Supply; (3)High Speed Power Switching; (4)Hard Switched and High Frequency Circuits.

Parametrics

IRFP32N50 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 32A max; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 20 A max; (3)IDM, Pulsed Drain Current: 130A max; (4)PD @TC = 25℃, Power Dissipation: 460 W max; Linear Derating Factor: 3.7 W/℃ max; (5)VGS, Gate-to-Source Voltage: ± 30 V max; (6)dv/dt, Peak Diode Recovery dv/dt: 13 V/ns max; (7)TJ, Operating Junction: -55 to + 150℃ max; (8)TSTG, Storage Temperature Range: -55 to + 150℃ max; (9)Soldering Temperature, for 10 seconds (1.6mm from case ): 300 ℃ max.

Features

IRFP32N50 features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Low RDS(on).

Diagrams

IRFP32N50 Package Outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFP32N50K
IRFP32N50K
Vishay/Siliconix
MOSFET N-Chan 500V 32 Amp
Data Sheet
0-331: $8.68
331-500: $7.96
IRFP32N50KPBF
IRFP32N50KPBF
Vishay/Siliconix
MOSFET N-Chan 500V 32 Amp
Data Sheet
0-1: $4.06
1-10: $3.32
10-100: $3.00
100-250: $2.75
IRFP32N50KS
IRFP32N50KS
Other

Data Sheet
Negotiable