Product Summary

The MRF857S is an NPN silicon RF power transistor designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz.

Parametrics

MRF857S absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 30 Vdc; (2)Collector–Base Voltage VCBO: 55 Vdc; (3)Emitter–Base Voltage VEBO: 4 Vdc; (4)Total Device Dissipation, PD: 17Watts; (5)Operating Junction Temperature TJ: 200℃; (6)Storage Temperature Range Tstg: – 65 to +150℃.

Features

MRF857S features: (1)Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics; (2)Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800–960 MHz; (3)Silicon Nitride Passivated; (4)100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power; (5)Will Withstand RF Input Overdrive of 0.4 W CW; (6)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration; (7)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Diagrams

MRF857S block diagram

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