(China (Mainland))
Product Summary
The RJK6026 is a Silicon N Channel MOS FET.
Parametrics
RJK6026 absolute maximum ratings: (1)Drain to source voltage VDSS: 600 V; (2)Gate to source voltage VGSS: ±30 V; (3)Drain current ID: 5 A; (4)Drain peak current ID (pulse): 20 A; (5)Body-drain diode reverse drain current IDR: 5 A; (6)Body-drain diode reverse drain peak current IDR (pulse): 20 A; (7)Avalanche current IAP: 4 A; (8)Avalanche energy EAR: 0.87 mJ; (9)Channel dissipation Pch: 62.5 W; (10)Channel temperature Tch: 150℃; (11)Storage temperature Tstg: –55 to +150℃.
Features
RJK6026 features: (1)Low on-resistance; (2)Low leakage current; (3)High speed switching.
Diagrams
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 RJK6013DPE |
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RJK6014DPK |
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Negotiable |
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RJK6014DPP |
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Negotiable |
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RJK6015DPK |
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Negotiable |
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RJK6018DPK |
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Negotiable |
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RJK6024DPD-00#J2 |
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MOSFET N-CH 600V 0.4A MP3A |
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