Product Summary

The RJK6026 is a Silicon N Channel MOS FET.

Parametrics

RJK6026 absolute maximum ratings: (1)Drain to source voltage VDSS: 600 V; (2)Gate to source voltage VGSS: ±30 V; (3)Drain current ID: 5 A; (4)Drain peak current ID (pulse): 20 A; (5)Body-drain diode reverse drain current IDR: 5 A; (6)Body-drain diode reverse drain peak current IDR (pulse): 20 A; (7)Avalanche current IAP: 4 A; (8)Avalanche energy EAR: 0.87 mJ; (9)Channel dissipation Pch: 62.5 W; (10)Channel temperature Tch: 150℃; (11)Storage temperature Tstg: –55 to +150℃.

Features

RJK6026 features: (1)Low on-resistance; (2)Low leakage current; (3)High speed switching.

Diagrams

RJK6026 block diagram

RJK6013DPE
RJK6013DPE
Other

Data Sheet
Negotiable 
RJK6015DPK
RJK6015DPK
Other

Data Sheet
Negotiable 
RJK6018DPK
RJK6018DPK
Other

Data Sheet
Negotiable 
RJK6024DPD-00#J2
RJK6024DPD-00#J2

MOSFET N-CH 600V 0.4A MP3A
Data Sheet
0-3000: $0.25
3000-6000: $0.23
6000-15000: $0.22
15000-30000: $0.22
30000-75000: $0.21
RJK6025DPD-00#J2
RJK6025DPD-00#J2

MOSFET N CH 600V 1A MP3A
Data Sheet
0-1: $0.73
1-10: $0.65
10-25: $0.57
25-100: $0.52
100-250: $0.45
250-500: $0.40
500-1000: $0.31
RJK6014DPP
RJK6014DPP
Other

Data Sheet
Negotiable